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I-LK-AMPD-S i-Speed High Amplified Microwave InGaAs Photodetector
- Isantya esiphezulu, i-Bandwidth
- I-Bias-T eBandakanyiweyo
- O/E Hybrid Integrated
- Inzuzo ephezulu, ingxolo ephantsi, iBroadband
- Itywinelwe ngokuGunyaziweyo, isiqhagamshelo se-SMA
- Ubumnyama Obusezantsi, umlinganiselo ophezulu wesignali ukuya kwingxolo.
- IFomu encinci Factor.
Ingcaciso yeMveliso
I-LK-AMPD-S i-hybrid ye-photodiode ye-InGaAs kunye ne-low-noise amplifier, eyenzelwe impendulo ebanzi ye-optical ukusuka kwi-1000 ukuya kwi-1650nm kwaye inikezela nge-15 dB RF inzuzo. Ihambisa ukusebenza kwesantya esiphezulu kunye ne-bandwidth ye-12GHz kunye ne-18GHz, kwaye inikwe amandla yi-5V yokubonelela.
Le modyuli iyahambelana ne-fiber ye-mode eyodwa ye-9/125μm kwaye inesidibanisi se-SMA esine-50 ohm impedance match.
I-LK-AMPD-S itywinwe nge-hermetically kukhuseleko lokusingqongileyo kwaye inoyilo olukhaphukhaphu, kunye nobunzima obungaphantsi kwe-23 grams. Iyahambelana noMqathango weZinto eziNcedayo (RoHS) 2.0, iqinisekisa uzinzo lokusingqongileyo kunye nokuthotyelwa kwemigangatho engqongqo yokhuseleko.
Izikhankanyi Technical
| Umgangatho kunye nowona mlinganiselo uphezulu ogqibeleleyo | ||||
|---|---|---|---|---|
| ye parameter | Sym. | uhlobo | ireyithingi | Unit |
| Uluhlu lobushushu lokugcina | TI-STG | -45 ～ +85 | -55 ～ +100 | ℃ |
| Uluhlu lobushushu betyala elisebenzayo | TC | 25 | -40 ～ +85 | ℃ |
| I-Bias Voltage | VR | +5 | +5 ～ +9 | V |
| Amandla oNgeniso lwaMacho | pin | 0 | + 10 | dBm |
| Amandla okukhanya okutshisayo | PB | - | + 13 | dBm |
| Ubushushu be-lead soldering | Tp | 280 (10s) | 330 (10s) | ℃ |
| Iimpawu zoMbane / zoMbane (TC = 22 ± 3 ℃ ) | ||||||
|---|---|---|---|---|---|---|
| ye parameter | I-Sym | Umbandela wovavanyo | Amaxabiso eParameter | Unit | ||
| Uluhlu lweWavelength | λ | - | 1000 ~ 1650 | nm | ||
| Uluhlu lokuphindaphinda | - | - | X - Band | Ku-Band | - | |
| Ububanzi boMqondiso omncinci | f-3dB | TC = 22 ± 3℃ | 0. 3 ～ 12 | 0. 8 ～ 19.5 | GHz | |
| Ukuphendula | Re | VR =+5V, Pin =10mW | λ = 1310 nm | 0.8 | 0.85 | A/W |
| λ = 1550 nm | 0.85 | 0.8 | ||||
| I-Amplitude Flatness | A | TC =-45～+85 ℃ | ≤ ± 2 | dB | ||
| Saturation Optical Power | Ps | VR =+ 5 V, λ = 1550 nm AC Modulated |
10 | dBm | ||
| Inzuzo yesiginali yeRF (Eqhelekileyo) | G | - | 15 ± 1 | dB | ||
| Saturation RF Output Power | Pphandle | - | +3 | dBm | ||
| Iziphumo VSWR | VSWR | - | Umgangatho wee-2 | - | ||
| Impedance yoPhumo | RL | - | 50 | Ω | ||
● Iijiko zokuphendula eziqhelekileyo
( Ikhiwane . 1 X-Band Photodetector Frequency Response
( Ikhiwane . 2 Ku-Band Photodetector Frequency Response
●Ubungakanani kunye nezikhonkwane ( Iyunithi:mm[ intshi] )
Isidibanisi seRF: SMA
●Uku-odola uLwazi
Iphepha loku-1:
| ikhowudi | RF Signal inzuzo | ongenazi- |
| S | I-15 dB | UQhakamshelwano & Uziko lokuphindaphinda |
Iphepha loku-2:
| ikhowudi | I-Analog Bandwidth |
| X | 0. 3 ～ 12 GHz |
| Ku | 0. 8 ～ 19.5 GHz |
Iphepha loku-3:
| ikhowudi | Udidi Connector | ongenazi- |
| N | Akukho Siqhagamshelo | Imowudi enye 9 / 125 μm fiber pigtail |
| A | FC / APC | |
| P | FC / PC |
● Izilumkiso
Iradiyasi yokugoba ifayibha ayikho ngaphantsi kwe-20 mm yokuthintela ukonakala kwefiber.
Qinisekisa ukuba indawo yokudibanisa ifayibha icocekile phambi kokuba uyidibanise ne-opto-circuit.
Ukhuseleko olufanelekileyo lwe-ESD luyafuneka kwindawo yokugcina, ukuthutha kunye nokusetyenziswa.
Zonke ii-photodetectors zethu eziqhelekileyo zinokulungiswa zibe ziimodyuli!
izicelo
Ukwenziwa koLwazi lweRadar
Imfazwe ye-elektroniki
Umlinganiselo we-antenna
Unxibelelwano lweFayibha Optic
Ukhuseleko kunye noPhononongo
